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BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with the BD744 Series 90 W at 25C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current Customer-Specified Selections Available
B C E
q q q q
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BD743 Collector-base voltage (IE = 0) BD743A BD743B BD743C BD743 Collector-emitter voltage (IB = 0) BD743A BD743B BD743C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot 1/2LIC 2 TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 15 20 5 90 2 90 -65 to +150 -65 to +150 -65 to +150 250 V A A A W W mJ C C C C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD743 V (BR)CEO IC = 30 mA IB = 0 (see Note 5) BD743A BD743B BD743C VCE = 50 V V CE = 70 V V CE = 90 V ICBO Collector cut-off current V CE = 110 V V CE = 50 V V CE = 70 V V CE = 90 V V CE = 110 V ICEO IEBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 30 V V CE = 60 V VEB = VCE = V CE = V CE = IB = IB = VCE = V CE = 5V 4V 4V 4V 0.5 A 5A 4V 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 1 A IC = 5 A IC = 15 A IC = 5 A IC = 15 A IC = 5 A IC = 15 A IC = 1 A IC = 1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 5 (see Notes 5 and 6) 40 20 5 1 3 1 3 V V 150 TC = 125C TC = 125C TC = 125C TC = 125C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743/743A BD743B/743C MIN 45 60 80 100 0.1 0.1 0.1 0.1 5 5 5 5 0.1 0.1 0.5 mA mA mA V TYP MAX UNIT
hFE
VCE(sat) VBE hfe
VCE = 10 V VCE = 10 V
|hfe|
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.4 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER td tr ts tf
TEST CONDITIONS IC = 5 A V BE(off) = -4.2 V IB(on) = 0.5 A RL = 6
MIN IB(off) = -0.5 A tp = 20 s, dc 2%
TYP 20 350 500 400
MAX
UNIT ns ns ns ns
Delay time Rise time Storage time Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
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BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
100
TCS637AA
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 10 IC = 10 IB tp = 300s, duty cycle < 2%
TCS637AB
TC = 125C TC = 25C TC = -55C hFE - DC Current Gain
1*0
0*1
VCE = 4 V tp = 300 s, duty cycle < 2% 10 0*1 1*0 10 100
TC = -55C TC = 25C TC = 125C 0*01 0*1 1*0 10 100
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
10 VCE = 4 V tp = 300s, duty cycle < 2% VBE - Base-Emitter Voltage - V
TCS637AC
1*0
TC = -55C TC = 25C TC = 125C 0*1 0*1 1*0 10 100
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
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BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS637AA
IC - Collector Current - A
10
tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation
1*0
0*1 BD743 BD743A BD743B BD743C 0*01 1*0 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS637AA
Figure 5.
PRODUCT
INFORMATION
4
BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
PRODUCT
INFORMATION
5
BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
PRODUCT
INFORMATION
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